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Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A s Features q q q Unit: mm 15.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1548 2SB1548A 2SB1548 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings -60 -80 -60 -80 -5 -5 -3 25 2 150 -55 to +150 Unit V 3.20.1 13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 9.90.3 4.60.2 2.90.2 2.60.1 emitter voltage 2SB1548A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V 0.550.15 1 2 A A W C C 2.540.3 3 5.080.5 1:Base 2:Collector 3:Emitter TO-220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1548 2SB1548A 2SB1548 2SB1548A 2SB1548 2SB1548A (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = -1A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 VCE = -60V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -3A, IB = - 0.375A VCE = -10V, IC = - 0.5A, f = 10MHz 30 0.5 1.2 0.3 -60 -80 70 10 -1.8 -1.2 V V MHz s s s 250 V min typ max -200 -200 -300 -300 -1 Unit A A mA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors PC -- Ta 40 -6 (1) TC=Ta (2) Without heat sink (PC=2W) TC=25C 2SB1548, 2SB1548A IC -- VCE -8 -7 -5 VCE=-4V TC=25C IC -- VBE Collector power dissipation PC (W) 36 32 28 (1) 24 20 16 12 8 4 0 0 20 (2) Collector current IC (A) Collector current IC (A) -6 -5 -4 -3 -2 -1 0 -4 IB=-100mA -80mA -3 -60mA -40mA -30mA -2 -20mA -16mA -12mA -8mA -4mA -1 0 40 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 IC/IB=10 TC=25C 10000 hFE -- IC 1000 VCE=-4V TC=25C 300 100 30 10 3 1 0.3 fT -- IC VCE=-10V f=10MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 - 0.3 - 0.1 - 0.03 - 0.01 - 0.003 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -3 -10 3000 -1 -3 -10 0.1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) -100 -30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 80 x t2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 -10 -3 -1 ICP IC DC t=1ms 10ms - 0.3 - 0.1 - 0.03 - 0.01 -1 1 10-1 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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